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Honeywell AlGaAs Infrared Emitting Diode - SE2470

● Miniature, hermetically sealed, pill style, metal can package
● 18° (nominal) beam angle
● Wide operating temperature range (- 55 ℃ to +125 ℃)
● Higher power output than GaAs at equivalent drive currents
● Ideal for direct mounting to printed circuit boards
● 880 nm wavelength

Model Number: SE2470
Data Sheet:

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Product Specification

Honeywell AlGaAs Infrared Emitting Diode - SE2470

Description
The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

Features
● Miniature, hermetically sealed, pill style, metal can package
● 18° (nominal) beam angle
● Wide operating temperature range (- 55 ℃ to +125 ℃)
● Higher power output than GaAs at equivalent drive currents
● Ideal for direct mounting to printed circuit boards
● 880 nm wavelength
● Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington

ABSOLUTE MAXIMUM RATINGS (25 ℃ Free-Air Temperature unless otherwise noted)
Continuous Forward Current: 75 mA
Power Dissipation: 125 mW
Operating Temperature Range: -55 ℃ to 125 ℃
Storage Temperature Range: -65 ℃ to 150 ℃
Soldering Temperature (10 sec): 260 ℃